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Datasheet File OCR Text: |
SEMiX452GB176HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE 20 V Tj = 125 C VCES 1700 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1700 437 310 300 600 -20 ... 20 10 -55 ... 150 Tc = 25 C Tc = 80 C 389 262 300 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 600 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)2s Trench IGBT Modules SEMiX452GB176HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Tj = 150 C Typical Applications * AC inverter drives * UPS * Electronic welders Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V Tj = 25 C Tj = 125 C 5.2 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 26.4 1.10 0.88 2800 2.50 340 75 180 900 105 110 0.073 2 2.45 1 0.9 3.3 5.2 5.8 0.1 2.45 2.9 1.2 1.1 4.2 6.0 6.4 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W Conditions min. typ. max. Unit VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1700 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 1200 V IC = 300 A Tj = 125 C RG on = 4 RG off = 4 GB (c) by SEMIKRON Rev. 11 - 02.12.2008 1 SEMiX452GB176HDs Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 4500 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 1200 V per diode per diode 18 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.045 5 5 250 0,493 5% 3550 2% 0.9 0.7 2.0 2.7 min. typ. 1.7 1.7 1.1 0.9 2.0 2.7 360 85 46 max. 1.9 1.9 1.3 1.1 2.0 2.7 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chiplevel VF0 rF IRRM SEMiX(R)2s Trench IGBT Modules SEMiX452GB176HDs Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.15 K/W K/W nH m m K/W Nm Nm Nm g Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic welders Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K GB 2 Rev. 11 - 02.12.2008 (c) by SEMIKRON SEMiX452GB176HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 11 - 02.12.2008 3 SEMiX452GB176HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 11 - 02.12.2008 (c) by SEMIKRON SEMiX452GB176HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 11 - 02.12.2008 5 |
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